“Scanning Tunneling Spectroscopy Predicts Semiconductor Heterojunction Performance Based on Dopant Spatial Distribution”

https://pubmed.ncbi.nlm.nih.gov/38117664

This study demonstrates that scanning tunneling spectroscopy can predict the performance of a semiconductor heterojunction based on the spatial distribution of dopants, providing a useful prequel for device development in novel material junctions with doping fluctuations.