Home ยป “Stacked Chern Insulators with Opposite Chiralities Can Create Gapless Helical Edge States in 2D: EuO as a Suitable Candidate Material”

“Stacked Chern Insulators with Opposite Chiralities Can Create Gapless Helical Edge States in 2D: EuO as a Suitable Candidate Material”

by satcit

https://pubmed.ncbi.nlm.nih.gov/38112315

The study proposes that stacked Chern insulators with opposite chiralities can create gapless helical edge states in 2D, using the square lattice as an example, and suggests EuO as a suitable candidate for material realization.

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